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Global Silicon Carbide(SiC) Power Devices Market Growth (Status and Outlook) 2024-2031
As the global economy mends, the 2021 growth of Silicon Carbide(SiC) Power Devices will have significant change from previous year. According to our (LP Information) latest study, the global Silicon Carbide(SiC) Power Devices market size is USD million in 2022 from USD million in 2021, with a change of % between 2021 and 2022. The global Silicon Carbide(SiC) Power Devices market size will reach USD million in 2028, growing at a CAGR of % over the analysis period.
The United States Silicon Carbide(SiC) Power Devices market is expected at value of US$ million in 2021 and grow at approximately % CAGR during review period. China constitutes a % market for the global Silicon Carbide(SiC) Power Devices market, reaching US$ million by the year 2028. As for the Europe Silicon Carbide(SiC) Power Devices landscape, Germany is projected to reach US$ million by 2028 trailing a CAGR of % over the forecast period. In APAC, the growth rates of other notable markets (Japan and South Korea) are projected to be at % and % respectively for the next 5-year period.
Global main Silicon Carbide(SiC) Power Devices players cover Infineon Technologies, Cree, Mitsubishi Electric, and ON Semiconductor, etc. In terms of revenue, the global largest two companies occupy a share nearly % in 2021.
This report presents a comprehensive overview, market shares, and growth opportunities of Silicon Carbide(SiC) Power Devices market by product type, application, key manufacturers and key regions and countries.
Segmentation by type: breakdown data from 2017 to 2022, in Section 2.3; and forecast to 2028 in section 12.6
Diodes
Modules
Transistors
Other
Segmentation by application: breakdown data from 2017 to 2022, in Section 2.4; and forecast to 2028 in section 12.7.
EV/HEVs
PV Inverters
UPS & PS
Other
This report also splits the market by region: Breakdown data in Chapter 4, 5, 6, 7 and 8.
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The report also presents the market competition landscape and a corresponding detailed analysis of the prominent manufacturers in this market, include
Infineon Technologies
Cree
Mitsubishi Electric
ON Semiconductor
ROHM Semiconductor
STMicroelectronics
Toshiba
Frequently Asked Questions
Global Silicon Carbide Power Devices Market report offers great insights of the market and consumer data and their interpretation through various figures and graphs. Report has embedded global market and regional market deep analysis through various research methodologies. The report also offers great competitor analysis of the industries and highlights the key aspect of their business like success stories, market development and growth rate.
Global Silicon Carbide Power Devices Market report is categorised based on following features:
- Global Market Players
- Geopolitical regions
- Consumer Insights
- Technological advancement
- Historic and Future Analysis of the Market
Global Silicon Carbide Power Devices Market report is designed on the six basic aspects of analysing the market, which covers the SWOT and SWAR analysis like strength, weakness, opportunity, threat, aspirations and results. This methodology helps investors to reach on to the desired and correct decision to put their capital into the market.